Effect of the back gate conduction on 0.25 μm SOI devices

J. L. Pelloie*, D. K. Sadana, H. J. Hovel, G. G. Shahidi, J. Warnock, J. Y.C. Sun, B. Davari

*Corresponding author for this work

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

This paper examines the off-state leakage current of 0.25 μm SOI devices for low-voltage and low-power applications. From both electrical measurements and two-dimension simulations (with impact ionization) the off-state leakage current is found to be due to the back gate conduction arising from the combined drain induced barrier lowering and floating body charging effects. Comparison between thin and thick buried oxides shows that the use of a thin buried oxide is limited by the presence of fixed charge density in the buried oxide, a high doping level is thus required to prevent any parasitic conduction at the back interface.

Original languageEnglish
Pages (from-to)653-656
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1994
EventProceedings of the 1994 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 11 Dec 199414 Dec 1994

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