Effect of chemical oxide and low temperature long time annealing on the electrical characteristics for rare earth oxides deposited on Si(100) were investigated. Formation of chemical oxide on Si substrates prior to the Gd 2 O 3 depositions was found to decrease the leakage current significantly compared the films deposited on HF-last Si substrate, when the thickness was 3.5nm or thicker, while the effect was not observed when the thickness was 2.8nm. Annealing at 400°C for 90min also decreased leakage current of Dy 2 O 3 thin films with little increase of capacitance equivalent thickness (CET).
- Chemical oxide
- High-k gate dielectric
- Interfacial layer
- Low temperature long time annealing
- Rare earth oxides