Effect of substrate temperature on the microstructure of thin-film silicide

U. Köster*, King-Ning Tu, P. S. Ho

*Corresponding author for this work

Research output: Contribution to journalArticle

26 Scopus citations

Abstract

The effect of substrate temperature Ts during evaporation on the microstructure of Pd2Si thin films on (111) Si formed by evaporation followed by subsequent higher-temperature anneal has been investigated by transmission electron microscopy. For Ts of 20 and 100°C, the Pd2Si grows epitaxially on the substrate. For a Ts of 200°C the Pd2Si is polycrystalline and grains are uniaxially textured about the [001] axis and there are pinholes in the film. For a T s of 300°C, the microstructure of Pd2Si is spongy and grains are much less oriented.

Original languageEnglish
Pages (from-to)634-636
Number of pages3
JournalApplied Physics Letters
Volume31
Issue number9
DOIs
StatePublished - 1 Dec 1977

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