Effect of substrate misorientation on the material properties of GaAs/ Al0.3Ga0.7As tunnel diodes

H. W. Yu, E. Y. Chang, H. Q. Nguyen, J. T. Chang, C. C. Chung, C. I. Kuo, Y. Y. Wong, W. C. Wang

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Abstract

The effect of substrate misorientation on the material quality of the N++ -GaAs/ P++ -AlGaAs tunnel diodes (TDs) grown on these substrates is investigated. It is found that the misorientation influences both surface roughness and interface properties of the N++ -GaAs/ P ++ -AlGaAs TDs. Smooth surface (rms roughness: 1.54 Å) and sharp interface for the GaAs/ Al0.3 Ga0.7As TDs were obtained when the (100) tilted 10° off toward [111] GaAs substrate was used. Besides, the oxygen content in N++ -GaAs and P++ -AlGaAs layers grown on the 10° off GaAs substrates was reduced due to the reduction of sticking coefficient and number of anisotropic sites.

Original languageEnglish
Article number231903
JournalApplied Physics Letters
Volume97
Issue number23
DOIs
StatePublished - 6 Dec 2010

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