Effect of substrate biasing on Si/SiGe heterostructure MOSFETs for low-power circuit applications

Pei-Wen Li*, Wei Ming Liao, Ching Chieh Shih, Tine Shang Kuo, Li Shyue Lai, Yang Tai Tseng, Ming J. Tsai

*Corresponding author for this work

Research output: Contribution to journalLetter

3 Scopus citations

Abstract

We have investigated the effect of substrate biasing on the subthreshold characteristics and noise levels of Si/Si1-xGex (x = 0, 0.15, 0.3) heterostructure MOSFETs. A detailed analysis of the dependence of threshold voltage, off-state current, and low-frequency noise level on the substrate-source (Vbs) biasing showed that SiGe heterostructure MOSFETs offer a significant speed advantage, an extended subthreshold operation region, a reduced noise level, and reduced bulk potential sensitivity compared to Si bulk devices. These experimental results demonstrate that SiGe heterostructure MOSFETs render a promising extension to the CMOS technologies at the low-power limit of operation, eventually making the microrpower implementation of radio frequency (RF) functions feasible.

Original languageEnglish
Pages (from-to)454-456
Number of pages3
JournalIEEE Electron Device Letters
Volume24
Issue number7
DOIs
StatePublished - 1 Jul 2003

Keywords

  • Body effect
  • Low power
  • SiGe

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