Effect of SiO2 additive as inhibitor on crystalline structure and H2S sensing performance of CuO-Au-SnO2 thin film prepared by liquid phase deposition

Jin-Chern Chiou*, Shang Wei Tsai, Cheng Tang Huang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In situ SiO2-doped SnO2 thin films have been prepared by liquid phase deposition method. The effect of SiO2 additive on the surface morphology and crystalline structural of the thin films were investigated by grazing incident angle X-ray diffraction (GIAXRD) and scanning electron microscopy (SEM). In the characteristics of sensing response, the SiO2-doped CuOAu-SnO2 gas sensors (Si/Sn = 0.25 and 0.33) have greater sensitivity and shorter response time than CuO-Au-SnO2 gas sensor. However, the doped CuO-Au-SnO2 gas sensors (Si/Sn = 0.33) can obtained better sensitivity (S = 67 for 2ppm) and response time (t90% < 3 s).

Original languageEnglish
Title of host publicationIEEE Sensors 2010 Conference, SENSORS 2010
Pages333-336
Number of pages4
DOIs
StatePublished - 1 Dec 2010
Event9th IEEE Sensors Conference 2010, SENSORS 2010 - Waikoloa, HI, United States
Duration: 1 Nov 20104 Nov 2010

Publication series

NameProceedings of IEEE Sensors

Conference

Conference9th IEEE Sensors Conference 2010, SENSORS 2010
CountryUnited States
CityWaikoloa, HI
Period1/11/104/11/10

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