Effect of silicon on microstructure development between Al2O3/SiO2/ZrO2 at 1450°C

Yu Hsiang Chen, Chien-Cheng Lin, Kun Lin Lin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Different kinds of ceramics were reacted to silicon in order to evaluate the suitable materials for crystal growth of silicon under the Czochralski process (CZ). Three types of Al2O3, SiO2, and ZrO2 plates were reacted with silicon wafer at 1450°C/30 min in Ar. The interfacial characterization of the reaction between Si/ceramics was performed by using SEM, TEM, and EDS. The oxygen concentration of Si will be executed by FTIR. Among them, large amounts of dislocations were found in Si/SiO2 joint due to the difference of coefficient of thermal expansion (CTE). Only one intermetallic compound, Zr-Si phase, was found in the Si/ZrO2 joint caused by the diffusion of Zr from ZrO2 into Si. In Si/Al2O3 joint, few dislocations at the interface, no any intermetallic compounds, and low oxygen dissolution were found and support that the Al2O3 could be a suitable material for Si growth application.

Original languageEnglish
Title of host publicationMaterials Science and Technology Conference and Exhibition 2017, MS and T 2017
PublisherAssociation for Iron and Steel Technology, AISTECH
Pages1266-1269
Number of pages4
ISBN (Electronic)9781510850583
DOIs
StatePublished - 1 Jan 2017
EventMaterials Science and Technology Conference and Exhibition 2017, MS and T 2017 - Pittsburgh, United States
Duration: 8 Oct 201712 Oct 2017

Publication series

NameMaterials Science and Technology Conference and Exhibition 2017, MS and T 2017
Volume2

Conference

ConferenceMaterials Science and Technology Conference and Exhibition 2017, MS and T 2017
CountryUnited States
CityPittsburgh
Period8/10/1712/10/17

Keywords

  • Crucible
  • Interface
  • Precipitation
  • Silicon

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