Effect of Si bicrystal on the formation of nano-scaled silicides

C. L. Hsin, Wen-Wei Wu, L. J. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Regularly distributed dislocation network with a controllable spacing could be formed by wafer bonding. Different kinds of Si bicrystals were fabricated by (001), (111) and (110) Si wafers bonded with (001) SOI. NiSi2 formed on the bicrystal was found to be affected by the underlying dislocation arrays. The nanostructures were confined by the dislocation grids. It demonstrates that by means of controlling the surface stress arrangement, the shape of the silicide nanostructures could be controlled and a variety of nanostructures could be obtained. The observation is conductive to the basic understanding of the stress effect on the formation of the silicide nanostructures on Si bicrystals.

Original languageEnglish
Title of host publicationECS Transactions - Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD
Pages83-88
Number of pages6
Edition8
DOIs
StatePublished - 1 Dec 2007
Event1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting - Washington, DC, United States
Duration: 7 Oct 200712 Oct 2007

Publication series

NameECS Transactions
Number8
Volume11
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference1st Nanoscale One-Dimensional Electronic and Photonic Devices, NODEPD - 212th ECS Meeting
CountryUnited States
CityWashington, DC
Period7/10/0712/10/07

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