Effect of Seed Layer on Gate-All-Around Poly-Si Nanowire Negative-Capacitance FETs with MFMIS and MFIS Structures: Planar Capacitors to 3-D FETs

Shen Yang Lee, Han Wei Chen, Chiuan Huei Shen, Po Yi Kuo, Chun Chih Chung, Yu En Huang, Hsin Yu Chen, Tien Sheng Chao*

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

In this article, we successfully fabricated nanowire (NW) negative capacitance (NC)-related ferroelectric FETs (FE-FETs) with two structures: trigate (TG) and gate-all-around (GAA). Planar capacitors with a metal-FE-metal (MFM) structure were investigated first. Post-metal annealing (PMA) at 700 °C resulted in the best ferroelectricity. This condition was considerably different from that of directly stacking onto NWs because of the difference in size and curvature between planar and TG or GAA structures. Because of the addition of an underlying ZrO2 seed layer, Hf1-x ZrxO2 in the gate-stack has been crystallized before the PMA process. In addition, two different gate-stack configurations, MFM-insulator-semiconductor (MFMIS) and metal-FE-insulator-semiconductor (MFIS), were investigated for the GAA structure. We determined that MFMIS displayed considerably more favorable subthreshold behavior and ON-state current compared with MFIS. NC-related phenomena, such as negative drain-induced barrier lowering and negative differential resistance, were observed.

Original languageEnglish
Article number8951114
Pages (from-to)711-716
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume67
Issue number2
DOIs
StatePublished - Feb 2020

Keywords

  • Gate-all-around (GAA)
  • Hf1O (HZO)
  • nanowire (NW)
  • negative capacitance (NC)
  • negative differential resistance (NDR)
  • negative drain-induced barrier lowering (DIBL)
  • ZrO

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