Effect of RTA on TiN films as the barrier layer for Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature

Miin Horng Juang, Chuan Chou Hwang, Huang-Chung Cheng

Research output: Contribution to journalConference article

Abstract

Effect of rapid-thermal-annealing on metallic barrier TiN against the interdiffusions of Ti and Si into BST in Pt/BST/Pt/TiN/Ti/Si capacitors has been studied. In the integration of BST capacitors, the thermal budget of the BST deposition would cause the inter-diffusions of Ti and Si from Ti adhesion layer and Si-plug respectively. This event would degrade the BST capacitors. To address this issue. rapid-thermal-annealed TiN barriers were used between the bottom electrode Pt and adhesion layer Ti. Optimal RTA condition for TiN were found in this experiment. Excellent electrical characteristics of Pt/BST/Pt/TiN/Ti/Si capacitors, including high dielectric constant (εr=320), low leakage current (1.5×10-8 A/cm2) under 0.1 MV/cm, and life time longer than 10 year lifetime under 1.6 MV/cm were obtained with Ar+O2 mixed ambient at a low substrate temperature (300°C).

Original languageEnglish
Pages (from-to)O7.11.1-O7.11.6
JournalMaterials Research Society Symposium - Proceedings
Volume672
DOIs
StatePublished - 1 Jan 2001
EventMechanisms of Surface and Microstructure Evolution in Deposited Films and Structures - San Francisco, CA, United States
Duration: 17 Apr 200120 Apr 2001

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