Effect of remote-surface-roughness scattering on electron mobility in MOSFETs with high-k dielectrics

M. Mamatrishat*, M. Kouda, T. Kawanago, K. Kakushima, P. Ahmet, A. Aierken, K. Tsutsui, A. Nishiyama, N. Sugii, K. Natori, H. Iwai

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

A model for remote surface roughness scattering (RSR)-limited electron mobility in the inversion layer of nMOSFETs with high-k dielectrics has been developed in this work. A numerical method is applied to calculate RSR-limited electron mobility. It has been demonstrated that the RSR-limited electron mobility is highly degraded in the high electric field region.

Original languageEnglish
Title of host publicationPhysics and Technology of High-k Materials 8
Pages249-255
Number of pages7
Edition3
DOIs
StatePublished - 2010
Event8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 11 Oct 201015 Oct 2010

Publication series

NameECS Transactions
Number3
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period11/10/1015/10/10

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  • Cite this

    Mamatrishat, M., Kouda, M., Kawanago, T., Kakushima, K., Ahmet, P., Aierken, A., Tsutsui, K., Nishiyama, A., Sugii, N., Natori, K., & Iwai, H. (2010). Effect of remote-surface-roughness scattering on electron mobility in MOSFETs with high-k dielectrics. In Physics and Technology of High-k Materials 8 (3 ed., pp. 249-255). (ECS Transactions; Vol. 33, No. 3). https://doi.org/10.1149/1.3481612