Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature

Chuan Chou Hwang; Miin Horng Juang; Ming Jiunn Lai; Cheng Chung Jaing; Jyh Shin Chen; Stewart Huang; Huang-Chung Cheng

doi:10.1016/S0038-1101(00)00235-5

Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature

Chuan Chou Hwang, Miin Horng Juang, Ming Jiunn Lai, Cheng Chung Jaing, Jyh Shin Chen, Stewart Huang, Huang-Chung Cheng

Department of Electronics Engineering

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

This investigation reports the effect of rapid-thermal-annealing (RTA) on metallic barrier TiN against the interdiffusions of Ti and Si into barium strontium titanate (BST) in Pt/BST/Pt/TiN/Ti/Si capacitors. In the integration of BST capacitors, the thermal budget of the BST deposition would cause the inter-diffusions of Ti and Si from Ti adhesion layer and Si plug respectively. This event would degrade the BST capacitors. To address this issue, rapid-thermal-annealed TiN barriers were deposited between the bottom electrode Pt and adhesion layer Ti. Optimal RTA condition for TiN were found in this experiment. Excellent electrical characteristics of Pt/BST/Pt/TiN/Ti/Si capacitors, including high dielectric constant (ε_r = 320), low leakage current (1.5×10^-8 A/cm²) under 0.1 MV/cm, and greater than 10 year lifetime under 1.6 MV/cm were obtained with Ar+O₂ mixed ambient at a low substrate temperature (300 °C).

Original language	English
Pages (from-to)	121-125
Number of pages	5
Journal	Solid-State Electronics
Volume	45
Issue number	1
DOIs	https://doi.org/10.1016/S0038-1101(00)00235-5
State	Published - 1 Jan 2001

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@article{12ae9ed984de4bb1a53bc663a594263f,

title = "Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature",

abstract = "This investigation reports the effect of rapid-thermal-annealing (RTA) on metallic barrier TiN against the interdiffusions of Ti and Si into barium strontium titanate (BST) in Pt/BST/Pt/TiN/Ti/Si capacitors. In the integration of BST capacitors, the thermal budget of the BST deposition would cause the inter-diffusions of Ti and Si from Ti adhesion layer and Si plug respectively. This event would degrade the BST capacitors. To address this issue, rapid-thermal-annealed TiN barriers were deposited between the bottom electrode Pt and adhesion layer Ti. Optimal RTA condition for TiN were found in this experiment. Excellent electrical characteristics of Pt/BST/Pt/TiN/Ti/Si capacitors, including high dielectric constant (εr = 320), low leakage current (1.5×10-8 A/cm2) under 0.1 MV/cm, and greater than 10 year lifetime under 1.6 MV/cm were obtained with Ar+O2 mixed ambient at a low substrate temperature (300 °C).",

author = "Hwang, {Chuan Chou} and Juang, {Miin Horng} and Lai, {Ming Jiunn} and Jaing, {Cheng Chung} and Chen, {Jyh Shin} and Stewart Huang and Huang-Chung Cheng",

year = "2001",

month = jan,

day = "1",

doi = "10.1016/S0038-1101(00)00235-5",

language = "English",

volume = "45",

pages = "121--125",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "1",

}

Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature. / Hwang, Chuan Chou; Juang, Miin Horng; Lai, Ming Jiunn; Jaing, Cheng Chung; Chen, Jyh Shin; Huang, Stewart; Cheng, Huang-Chung.

In: Solid-State Electronics, Vol. 45, No. 1, 01.01.2001, p. 121-125.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Effect of rapid-thermal-annealed TiN barrier layer on the Pt/BST/Pt capacitors prepared by RF magnetron co-sputter technique at low substrate temperature

AU - Hwang, Chuan Chou

AU - Juang, Miin Horng

AU - Lai, Ming Jiunn

AU - Jaing, Cheng Chung

AU - Chen, Jyh Shin

AU - Huang, Stewart

AU - Cheng, Huang-Chung

PY - 2001/1/1

Y1 - 2001/1/1

N2 - This investigation reports the effect of rapid-thermal-annealing (RTA) on metallic barrier TiN against the interdiffusions of Ti and Si into barium strontium titanate (BST) in Pt/BST/Pt/TiN/Ti/Si capacitors. In the integration of BST capacitors, the thermal budget of the BST deposition would cause the inter-diffusions of Ti and Si from Ti adhesion layer and Si plug respectively. This event would degrade the BST capacitors. To address this issue, rapid-thermal-annealed TiN barriers were deposited between the bottom electrode Pt and adhesion layer Ti. Optimal RTA condition for TiN were found in this experiment. Excellent electrical characteristics of Pt/BST/Pt/TiN/Ti/Si capacitors, including high dielectric constant (εr = 320), low leakage current (1.5×10-8 A/cm2) under 0.1 MV/cm, and greater than 10 year lifetime under 1.6 MV/cm were obtained with Ar+O2 mixed ambient at a low substrate temperature (300 °C).

AB - This investigation reports the effect of rapid-thermal-annealing (RTA) on metallic barrier TiN against the interdiffusions of Ti and Si into barium strontium titanate (BST) in Pt/BST/Pt/TiN/Ti/Si capacitors. In the integration of BST capacitors, the thermal budget of the BST deposition would cause the inter-diffusions of Ti and Si from Ti adhesion layer and Si plug respectively. This event would degrade the BST capacitors. To address this issue, rapid-thermal-annealed TiN barriers were deposited between the bottom electrode Pt and adhesion layer Ti. Optimal RTA condition for TiN were found in this experiment. Excellent electrical characteristics of Pt/BST/Pt/TiN/Ti/Si capacitors, including high dielectric constant (εr = 320), low leakage current (1.5×10-8 A/cm2) under 0.1 MV/cm, and greater than 10 year lifetime under 1.6 MV/cm were obtained with Ar+O2 mixed ambient at a low substrate temperature (300 °C).

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U2 - 10.1016/S0038-1101(00)00235-5

DO - 10.1016/S0038-1101(00)00235-5

M3 - Article

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