Effect of processing kinetics on the structure of ferromagnetic- ferroelectric-ferromagnetic interfaces

P. S. Sankara Rama Krishnan; Q. M. Ramasse; Wen I. Liang; Ying-hao Chu; V. Nagarajan; P. Munroe

doi:10.1063/1.4765045

Effect of processing kinetics on the structure of ferromagnetic- ferroelectric-ferromagnetic interfaces

P. S. Sankara Rama Krishnan^*, Q. M. Ramasse, Wen I. Liang, Ying-hao Chu, V. Nagarajan, P. Munroe

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Trilayer heterostructures consisting of a ferroelectric bismuth ferrite (BFO) film sandwiched between ferromagnetic lanthanum strontium manganese oxide (LSMO) films were fabricated using pulsed laser deposition. Both BFO thicknesses (20 nm, 5 nm) and cooling rates were varied to investigate the role of processing parameters on the chemistry of the interfaces. The interfaces were investigated using a dedicated aberration corrected scanning transmission electron microscope (STEM) operated at 100 kV via STEM-high angle annular dark field (STEM-HAADF) and STEM-electron energy loss spectroscopy (STEM-EELS) modes. Combined analysis through STEM-HAADF and STEM-EELS revealed the formation of lattice distortion in certain regions of the BFO layer for the ∼5 nm film. Piezoresponse force microscopy (PFM) studies of the ∼5 nm BFO sample revealed weak ferroelectric domain switching. Stacking fault defects with mixed valence manganese (Mn-B site cation) were formed in the top LSMO layer when the heterostructure was cooled at a slower rate irrespective of BFO thickness, thereby demonstrating the effect of processing kinetics on the physical integrity of the heterostructure.

Original language	English
Article number	104102
Number of pages	7
Journal	Journal of Applied Physics
Volume	112
Issue number	10
DOIs	https://doi.org/10.1063/1.4765045
State	Published - 15 Nov 2012

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@article{aa316dff58e449ab81da909dbe6b8d9d,

title = "Effect of processing kinetics on the structure of ferromagnetic- ferroelectric-ferromagnetic interfaces",

abstract = "Trilayer heterostructures consisting of a ferroelectric bismuth ferrite (BFO) film sandwiched between ferromagnetic lanthanum strontium manganese oxide (LSMO) films were fabricated using pulsed laser deposition. Both BFO thicknesses (20 nm, 5 nm) and cooling rates were varied to investigate the role of processing parameters on the chemistry of the interfaces. The interfaces were investigated using a dedicated aberration corrected scanning transmission electron microscope (STEM) operated at 100 kV via STEM-high angle annular dark field (STEM-HAADF) and STEM-electron energy loss spectroscopy (STEM-EELS) modes. Combined analysis through STEM-HAADF and STEM-EELS revealed the formation of lattice distortion in certain regions of the BFO layer for the ∼5 nm film. Piezoresponse force microscopy (PFM) studies of the ∼5 nm BFO sample revealed weak ferroelectric domain switching. Stacking fault defects with mixed valence manganese (Mn-B site cation) were formed in the top LSMO layer when the heterostructure was cooled at a slower rate irrespective of BFO thickness, thereby demonstrating the effect of processing kinetics on the physical integrity of the heterostructure.",

author = "{Sankara Rama Krishnan}, {P. S.} and Ramasse, {Q. M.} and Liang, {Wen I.} and Ying-hao Chu and V. Nagarajan and P. Munroe",

year = "2012",

month = nov,

day = "15",

doi = "10.1063/1.4765045",

language = "English",

volume = "112",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "10",

}

TY - JOUR

T1 - Effect of processing kinetics on the structure of ferromagnetic- ferroelectric-ferromagnetic interfaces

AU - Sankara Rama Krishnan, P. S.

AU - Ramasse, Q. M.

AU - Liang, Wen I.

AU - Chu, Ying-hao

AU - Nagarajan, V.

AU - Munroe, P.

PY - 2012/11/15

Y1 - 2012/11/15

N2 - Trilayer heterostructures consisting of a ferroelectric bismuth ferrite (BFO) film sandwiched between ferromagnetic lanthanum strontium manganese oxide (LSMO) films were fabricated using pulsed laser deposition. Both BFO thicknesses (20 nm, 5 nm) and cooling rates were varied to investigate the role of processing parameters on the chemistry of the interfaces. The interfaces were investigated using a dedicated aberration corrected scanning transmission electron microscope (STEM) operated at 100 kV via STEM-high angle annular dark field (STEM-HAADF) and STEM-electron energy loss spectroscopy (STEM-EELS) modes. Combined analysis through STEM-HAADF and STEM-EELS revealed the formation of lattice distortion in certain regions of the BFO layer for the ∼5 nm film. Piezoresponse force microscopy (PFM) studies of the ∼5 nm BFO sample revealed weak ferroelectric domain switching. Stacking fault defects with mixed valence manganese (Mn-B site cation) were formed in the top LSMO layer when the heterostructure was cooled at a slower rate irrespective of BFO thickness, thereby demonstrating the effect of processing kinetics on the physical integrity of the heterostructure.

AB - Trilayer heterostructures consisting of a ferroelectric bismuth ferrite (BFO) film sandwiched between ferromagnetic lanthanum strontium manganese oxide (LSMO) films were fabricated using pulsed laser deposition. Both BFO thicknesses (20 nm, 5 nm) and cooling rates were varied to investigate the role of processing parameters on the chemistry of the interfaces. The interfaces were investigated using a dedicated aberration corrected scanning transmission electron microscope (STEM) operated at 100 kV via STEM-high angle annular dark field (STEM-HAADF) and STEM-electron energy loss spectroscopy (STEM-EELS) modes. Combined analysis through STEM-HAADF and STEM-EELS revealed the formation of lattice distortion in certain regions of the BFO layer for the ∼5 nm film. Piezoresponse force microscopy (PFM) studies of the ∼5 nm BFO sample revealed weak ferroelectric domain switching. Stacking fault defects with mixed valence manganese (Mn-B site cation) were formed in the top LSMO layer when the heterostructure was cooled at a slower rate irrespective of BFO thickness, thereby demonstrating the effect of processing kinetics on the physical integrity of the heterostructure.

UR - http://www.scopus.com/inward/record.url?scp=84870718774&partnerID=8YFLogxK

U2 - 10.1063/1.4765045

DO - 10.1063/1.4765045

M3 - Article

AN - SCOPUS:84870718774

VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 10

M1 - 104102

ER -

Effect of processing kinetics on the structure of ferromagnetic- ferroelectric-ferromagnetic interfaces

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