Effect of postdeposition annealing temperatures on electrical characteristics of molecular-beam-deposited HfO 2 on n-InAs/InGaAs Metal-oxide-semiconductor capacitors

Hai Dang Trinh*, Yueh Chin Lin, Huan Chung Wang, Chia Hua Chang, Kuniyuki Kakushima, Hiroshi Iwai, Takamasa Kawanago, Yan Gu Lin, Chi Ming Chen, Yuen Yee Wong, Guan Ning Huang, Mantu Hudait, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

21 Scopus citations

Abstract

The electrical characteristics of molecular-beam-deposited HfO2/n-InAs/InGaAs metal-oxide-semiconductor capacitors with different postdeposition annealing (PDA) temperatures (400-550 °C) are investigated. Results show that the sample with the PDA temperature of 500 °C exhibits the best capacitance-voltage (C-V) behavior with small frequency dispersion and small hysteresis. The X-ray photoelectron spectroscopy (XPS) spectra show the reduction of the amount of As-related oxides to below the XPS detection level when the PDA temperature is up to 500 °C. As the PDA temperature was increased to above 500 °C, As and In atoms seem to diffuse significantly into HfO 2 , resulting in the degradation of C-V behavior.

Original languageEnglish
Article number021104
JournalApplied Physics Express
Volume5
Issue number2
DOIs
StatePublished - 1 Feb 2012

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