Effect of post-metallization annealing on electrical characteristics of La2O3 gate thin films

Atsushi Kuriyama*, Shun Ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Annealing conditions of a lanthanum oxide (La2O3) metal-insulator-semiconductor (MIS) capacitor were studied in order to optimize the flat-band voltage (VFB). It was confirmed that in the case of using Al electrodes, negative VFB shift was increased by post-deposition annealing (PDA) (before metallization) compared to as-deposited sample, while all other characteristics, such as EOT, leakage current and interface state density, were improved. It was also confirmed that post-metallization annealing (PMA) suppressed the VFB shift. Finally, the combination of PDA and PMA resulted in the recovery of VFB shift with suppression of the decrease of EOT. However, it was confirmed that in the case of using Au electrodes, PMA resulted in a slight negative VFB shift. Judging from these results, it is conceivable that the reaction of the metal with La2O3 exerts a significant influence on the V FB shift.

Original languageEnglish
Pages (from-to)1045-1051
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number2
DOIs
StatePublished - Feb 2005

Keywords

  • Fixed charge
  • Flat-band shift
  • High-k
  • LaO
  • Lanthanum oxide
  • Oxygen deficiency
  • Rare earth oxide

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