Effect of polycrystalline-silicon gate types on the opposite flatband voltage shift in n-type and p-type metal-oxide-semiconductor field-effect transistors for high-k-HfO2 dielectric

C. W. Yang*, Y. K. Fang, C. H. Chen, S. F. Chen, C. Y. Lin, C. S. Lin, M. F. Wang, Y. M. Lin, Tuo-Hung Hou, C. H. Chen, L. G. Yao, S. C. Chen, M. S. Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

Atomic layer deposition process was used to fabricate Hafnium dioxide gate dielectrics to investigate the flatband voltage shift relative to SiO2. It was found that the direction of the voltage shift depends on the Fermi level position in the gate material. A model was proposed to explain the effects of poly-Si gate type on the flatband voltage shift in MOSFETs.

Original languageEnglish
Pages (from-to)308-310
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number2
DOIs
StatePublished - 14 Jul 2003

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