Effect of oxide field on hot-carrier-induced degradation of metal-oxide-semiconductor field-effect transistors

J. Y. Choi*, P. K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticle

18 Scopus citations

Abstract

While the substrate current is a useful tool for extrapolating metal-oxide-semiconductor field-effect transistor lifetime from accelerated stressing data, the substrate current can vary significantly during a constant-voltage stress test. We have studied device degradation using a constant-field method. The critical electron energy for device degradation is found to be 3-6 eV, depending on the oxide electric field. These values are 50% higher than those reported elsewhere.

Original languageEnglish
Pages (from-to)1188-1190
Number of pages3
JournalApplied Physics Letters
Volume50
Issue number17
DOIs
StatePublished - 1 Dec 1987

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