Effect of nickel concentration on source/drain series resistance and channel resistance of Ni-metal-induced crystallization thin-film transistors

Ming Hui Lai, Yew-Chuhg Wu, Jung Jie Huang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The Ni-metal-induced crystallization (MIC) of amorphous Si (α-Si) has been employed to fabricate lowtemperature polycrystalline silicon (poly-Si) thin-film transistors (TFTs). Most studies have focused only on reducing Ni contamination because Ni residues cause high leakage current in MIC-TFTs. Also of concern is the source/drain (S/D) series resistance, which degrades the device performance (driving ability) that might vary with the Ni concentration in MIC-TFTs. Improving the driving ability of MIC-TFTs requires a detailed understanding of how Ni residues affect S/D series resistance. This study investigates how Ni concentration affects S/D series resistance by using the transmission line method. The results of this study provide further insight into how Ni concentration and resistance are related. The results show that the S/D series resistance and channel resistance decreased with a reduction in Ni concentration in MIC poly-Si because of better crystalline quality and lower degradation of the donor concentration. This phenomenon was caused by the Ni concentration forming less NiSi2 nucleation sites to generate a large grain size; Ni atoms serve as acceptor-like dopants in silicon, which counteract with the effects of n-type doping, subsequently reducing the donor concentration in the S/D region.

Original languageEnglish
Pages (from-to)500-503
Number of pages4
JournalThin Solid Films
Volume544
DOIs
StatePublished - 1 Oct 2013

Keywords

  • Metal-induced crystallization (MIC)
  • Ni concentration
  • Poly-Si
  • Source/drain resistance
  • Thin film transistors (TFTs)

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