Effect of Ni residues on the performance and the uniformity of nickel-induced lateral crystallization polycrystalline silicon nanowire thin-film transistors

Bau Ming Wang, Tzu Ming Yang, Yew-Chuhg Wu, Chun Jung Su, Horng-Chih Lin

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

High performance nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) were fabricated. The phosphorous-doped amorphous silicon (α-Si)/chem- SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance and the uniformity of NILC poly-Si NW TFTs. It was found that the performance and the uniformity of NW TFTs were greatly improved after Ni-gettering process.

Original languageEnglish
Pages (from-to)880-883
Number of pages4
JournalMaterials Chemistry and Physics
Volume124
Issue number1
DOIs
StatePublished - 1 Nov 2010

Keywords

  • Nanowire (NW)
  • Ni-gettering
  • Nickel-metal induced lateral crystallization (NILC)
  • Thin-film transistor (TFT)

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