High performance nickel-induced lateral crystallization (NILC) polycrystalline silicon (poly-Si) nanowire (NW) thin-film transistors (TFTs) were fabricated. The phosphorous-doped amorphous silicon (α-Si)/chem- SiO2 films were employed as Ni-gettering layers to investigate effect of Ni residues on the performance and the uniformity of NILC poly-Si NW TFTs. It was found that the performance and the uniformity of NW TFTs were greatly improved after Ni-gettering process.
- Nanowire (NW)
- Nickel-metal induced lateral crystallization (NILC)
- Thin-film transistor (TFT)