Effect of multiple AlN layers on quality of GaN films grown on Si substrates

Binh Tinh Tran*, Kung Liang Lin, Kartika Chandra Sahoo, Chen Chen Chung, Chi Lang Nguyen, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

In this paper, we present the effect of multiple thin high-low-high-temperature AlN (HLHT AlN) nucleation layers on GaN film quality. A 1.9-μm-thick GaN film grown on Si (111) substrate shows that the multiple HLHT AlN nucleation layers have a significant effect on GaN film quality. This process also plays a very important role in the growth of GaN films on Si (111) substrates. A high quality GaN film with a uniformly faceted surface with very low dislocation densities is obtained at the optimized multiple HLHT AlN nucleation layers 50-nm thick at a temperature of 1010-800-1010°C and a growth pressure of 50 Torr.[Figure not available: see fulltext.].

Original languageEnglish
Pages (from-to)1063-1067
Number of pages5
JournalElectronic Materials Letters
Volume10
Issue number6
DOIs
StatePublished - 19 Nov 2014

Keywords

  • AlN
  • GaN
  • MOCVD
  • Si

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