Effect of moisture on electrical properties and reliability of low dielectric constant materials

Yi Lung Cheng*, Ka Wai Leon, Jun Fu Huang, Wei Yuan Chang, Yu Min Chang, Leu-Jih Perng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

35 Scopus citations

Abstract

The effect of absorbed moisture on the electrical characteristics and reliability of low dielectric constant materials (low-k) was investigated in this study. The experimental results reveal that porous low-k dielectrics absorb more moisture than dense low-k dielectrics. This absorbed moisture degrades the electrical performance and reliability of both classes of low-k dielectrics. Annealing at a higher temperature of 400 C is required to decompose the physically-adsorbed moisture and thereby restore reliability performance. However, the chemically-adsorbed moisture seems to be difficult to remove by annealing at 400 C, causing a degraded TDDB performance.

Original languageEnglish
Pages (from-to)12-16
Number of pages5
JournalMicroelectronic Engineering
Volume114
DOIs
StatePublished - 1 Jan 2014

Keywords

  • Breakdown
  • Electromigration
  • Low-k dielectric
  • Moisture
  • Porogen
  • Reliability
  • TDDB

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