Effect of modulating field on photoreflectance simulated by electroreflectance

S. J. Chiou; Y. G. Sung; D. P. Wang; Kai-Feng Huang; T. C. Huang; A. K. Chu

doi:10.1063/1.369746

Effect of modulating field on photoreflectance simulated by electroreflectance

S. J. Chiou^*, Y. G. Sung, D. P. Wang, Kai-Feng Huang, T. C. Huang, A. K. Chu

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Photoreflectance (PR) of surface-intrinsic-n⁺ (s-i-n⁺) type doped GaAs has been simulated by electroreflectance (ER). The simulated spectra of the s-i-n⁺ sample have exhibited many Franz-Keldysh oscillations, which enable the electric field (F) to be determined. It is known that F's determined from PR are subjected to photovoltaic effect and the measured F is close to F_bi - δF/2 when the modulating field, δF ≪ F_bi, where F_bi is the built-in field of the sample and δF is the modulating field. In this work, we have investigated the relation between the measured F and δF not only for the region where δF ≪ F_bi holds, but also for a whole range of δF. In order to determine the magnitude of δF, we have used ER to simulate PR, that is, the measurements of ER under a forward bias, which is set to be equal to δF/2.

Original language	English
Pages (from-to)	3770-3773
Number of pages	4
Journal	Journal of Applied Physics
Volume	85
Issue number	7
DOIs	https://doi.org/10.1063/1.369746
State	Published - 1 Apr 1999

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@article{206934cd9c6b482c81dc2ae576c0e93e,

title = "Effect of modulating field on photoreflectance simulated by electroreflectance",

abstract = "Photoreflectance (PR) of surface-intrinsic-n+ (s-i-n+) type doped GaAs has been simulated by electroreflectance (ER). The simulated spectra of the s-i-n+ sample have exhibited many Franz-Keldysh oscillations, which enable the electric field (F) to be determined. It is known that F's determined from PR are subjected to photovoltaic effect and the measured F is close to Fbi - δF/2 when the modulating field, δF ≪ Fbi, where Fbi is the built-in field of the sample and δF is the modulating field. In this work, we have investigated the relation between the measured F and δF not only for the region where δF ≪ Fbi holds, but also for a whole range of δF. In order to determine the magnitude of δF, we have used ER to simulate PR, that is, the measurements of ER under a forward bias, which is set to be equal to δF/2.",

author = "Chiou, {S. J.} and Sung, {Y. G.} and Wang, {D. P.} and Kai-Feng Huang and Huang, {T. C.} and Chu, {A. K.}",

year = "1999",

month = apr,

day = "1",

doi = "10.1063/1.369746",

language = "English",

volume = "85",

pages = "3770--3773",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Effect of modulating field on photoreflectance simulated by electroreflectance

AU - Chiou, S. J.

AU - Sung, Y. G.

AU - Wang, D. P.

AU - Huang, Kai-Feng

AU - Huang, T. C.

AU - Chu, A. K.

PY - 1999/4/1

Y1 - 1999/4/1

N2 - Photoreflectance (PR) of surface-intrinsic-n+ (s-i-n+) type doped GaAs has been simulated by electroreflectance (ER). The simulated spectra of the s-i-n+ sample have exhibited many Franz-Keldysh oscillations, which enable the electric field (F) to be determined. It is known that F's determined from PR are subjected to photovoltaic effect and the measured F is close to Fbi - δF/2 when the modulating field, δF ≪ Fbi, where Fbi is the built-in field of the sample and δF is the modulating field. In this work, we have investigated the relation between the measured F and δF not only for the region where δF ≪ Fbi holds, but also for a whole range of δF. In order to determine the magnitude of δF, we have used ER to simulate PR, that is, the measurements of ER under a forward bias, which is set to be equal to δF/2.

AB - Photoreflectance (PR) of surface-intrinsic-n+ (s-i-n+) type doped GaAs has been simulated by electroreflectance (ER). The simulated spectra of the s-i-n+ sample have exhibited many Franz-Keldysh oscillations, which enable the electric field (F) to be determined. It is known that F's determined from PR are subjected to photovoltaic effect and the measured F is close to Fbi - δF/2 when the modulating field, δF ≪ Fbi, where Fbi is the built-in field of the sample and δF is the modulating field. In this work, we have investigated the relation between the measured F and δF not only for the region where δF ≪ Fbi holds, but also for a whole range of δF. In order to determine the magnitude of δF, we have used ER to simulate PR, that is, the measurements of ER under a forward bias, which is set to be equal to δF/2.

UR - http://www.scopus.com/inward/record.url?scp=0042431099&partnerID=8YFLogxK

U2 - 10.1063/1.369746

DO - 10.1063/1.369746

M3 - Article

AN - SCOPUS:0042431099

VL - 85

SP - 3770

EP - 3773

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 7

ER -

Effect of modulating field on photoreflectance simulated by electroreflectance

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