Effect of mechanical strain on the performance' of an a-Si:H TFT with different length on metal foil substrate

M. C. Wang*, T. C. Chang, Po-Tsun Liu, S. W. Tsao, J. R. Chen, Jian Shu Wir, Chin Jen Huang, Yu Hung Chen, Liang Tang Wang, Yih Rong Luo, I. Hsuan Peng, Te Chi Wong, Ya Lin Liu, Jung Fang Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this paper, the effect of mechanical strain on the performance of an hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) with different channel length on metal foil substrate under uniaxial compressive or tensile strain was studied, where the strain is parallel to the TFT source-drain current path. The process of TFT with the maximum temperature 190°C exhibited a field-effect mobility of 0.1 cm2/Vs and a threshold voltage of 1.95 V and the leakage current of less than 10-13 A. The TFTs were strained by inward (compression) or outward (tension) cylindrical bending. The mobility had a slightly change under the mechanical strain, which was due to the change in the disorder under bending strain.

Original languageEnglish
Title of host publicationProceedings of the International Display Manufacturing Conference and Exhibition, IDMC'05
EditorsH.P. David Shieh, F.C. Chen
Pages494-496
Number of pages3
StatePublished - Jun 2005
EventInternational Display Manufacturing Conference and Exhibition, IDMC'05 - Taipei, Japan
Duration: 21 Feb 200524 Feb 2005

Publication series

NameInternational Display Manufacturing Conference and Exhibition, IDMC'05

Conference

ConferenceInternational Display Manufacturing Conference and Exhibition, IDMC'05
CountryJapan
CityTaipei
Period21/02/0524/02/05

Keywords

  • A-Si TFT
  • Bending strain
  • Metal foil

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