Effect of Low and High Temperature Anneal on Process-Induced Damage of Gate Oxide

Joseph C. King, Chen-Ming Hu

Research output: Contribution to journalArticle

44 Scopus citations

Abstract

We have investigated the ability of high and low temperature anneals to repair the gate oxide damage due to simulated electrical stress caused by wafer charging resulting from plasma etching, etc. Even 800° C anneal cannot restore the stability in interface trap generation. Even 900° C anneal cannot repair the deteriorated charge-to-breakdown and oxide charge trapping. As a small consolation, the ineffectiveness of anneal in repairing the process-induced damage allows us to monitor the damages even at the end of the fabrication process.

Original languageEnglish
Pages (from-to)475-476
Number of pages2
JournalIEEE Electron Device Letters
Volume15
Issue number11
DOIs
StatePublished - 1 Jan 1994

Fingerprint Dive into the research topics of 'Effect of Low and High Temperature Anneal on Process-Induced Damage of Gate Oxide'. Together they form a unique fingerprint.

  • Cite this