Effect of layout on electromigration characteristics in copper dual damascene interconnects

Y. L. Cheng*, Y. M. Chang, Leu-Jih Perng, T. C. Bo, Y. L. Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

This study demonstrates that the electromigration (EM) behavior of dual damascene Cu lines is strongly affected by the layout which surrounded the tested EM lines, especially for Cu line below 0.10 μm used for 40 nm or below technologies. The Cu EM lifetime declines as the number of local dummy lines increase, and the global dummy line density increases with the width of the Cu line below 0.063 μm. This work presents mechanisms of layout effects that explain the EM characteristics and can be exploited to improve the layout effect. Therefore, not only the stressed Cu line structures, but also the surrounding layouts must to be considered in assessing EM reliability of a real IC circuit in 40 nm or below technology.

Original languageEnglish
Pages (from-to)19-23
Number of pages5
JournalMicroelectronic Engineering
Volume128
DOIs
StatePublished - 5 Oct 2014

Keywords

  • Copper
  • Electromigration
  • Interconnects
  • Layout

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