Effect of interconnect scaling and low-k dielectric on the thermal characteristics of the IC metal

Kaustav Banerjee*, Ajith Amerasekera, Girish Dixit, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

48 Scopus citations

Abstract

The effect of interconnect scaling and low-k dielectric on the thermal characteristics of interconnect structures has been characterized for the first time under DC and pulsed current conditions. It is shown that under DC conditions the thermal impedance of metal lines increases by about 10% when the low-k dielectric is used as the gap fill. The critical current density for the low-k structures under pulsed condition is shown to be about 10-30% lower than that of standard dielectric structures depending on metal and pulse widths.

Original languageEnglish
Pages (from-to)65-68
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
DOIs
StatePublished - 1 Dec 1996
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 8 Dec 199611 Dec 1996

Fingerprint Dive into the research topics of 'Effect of interconnect scaling and low-k dielectric on the thermal characteristics of the IC metal'. Together they form a unique fingerprint.

Cite this