Effect of In0.53Ga0.47As surface nitridation on electrical characteristics of high-k/ capacitors

Y. Suzuki, D. H. Zadeh, K. Kakushima, P. Ahmet, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

InGaAs surface nitridation effect on La2O3/InGaAs interface has been investigated. It was found that by controlling nitridation conditions such as temperature interface quality can be improved. Also a new covalent structure based on nitrided Si and La2O3 is proposed to reduce dielectric and substrate intermixing, thus improving the high-k/InGaAs interface.

Original languageEnglish
Title of host publicationDielectric Materials and Metals for Nanoelectronics and Photonics 10
Pages145-150
Number of pages6
Edition4
DOIs
StatePublished - 2012
EventSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting - Honolulu, HI, United States
Duration: 7 Oct 201212 Oct 2012

Publication series

NameECS Transactions
Number4
Volume50
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSymposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting
CountryUnited States
CityHonolulu, HI
Period7/10/1212/10/12

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    Suzuki, Y., Zadeh, D. H., Kakushima, K., Ahmet, P., Kataoka, Y., Nishiyama, A., Sugii, N., Tsutsui, K., Natori, K., Hattori, T., & Iwai, H. (2012). Effect of In0.53Ga0.47As surface nitridation on electrical characteristics of high-k/ capacitors. In Dielectric Materials and Metals for Nanoelectronics and Photonics 10 (4 ed., pp. 145-150). (ECS Transactions; Vol. 50, No. 4). https://doi.org/10.1149/05004.0145ecst