InGaAs surface nitridation effect on La2O3/InGaAs interface has been investigated. It was found that by controlling nitridation conditions such as temperature interface quality can be improved. Also a new covalent structure based on nitrided Si and La2O3 is proposed to reduce dielectric and substrate intermixing, thus improving the high-k/InGaAs interface.
|Title of host publication||Dielectric Materials and Metals for Nanoelectronics and Photonics 10|
|Number of pages||6|
|State||Published - 2012|
|Event||Symposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting - Honolulu, HI, United States|
Duration: 7 Oct 2012 → 12 Oct 2012
|Conference||Symposium on Dielectric Materials and Metals for Nanoelectronics and Photonics - 10 - 222nd ECS Meeting|
|Period||7/10/12 → 12/10/12|