Effect of InGaN/GaN multiple quantum wells with p-n quantum barriers on efficiency droop in blue lightemitting diodes

Sheng Wen Wang, Da Wei Lin, Chia Yu Lee, Che Yu Liu, Yu-Pin Lan, Hao-Chung Kuo*, Shing Chung Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this study, the structures of InGaN/GaN multiple quantum wells (MQWs) with p-n quantum barriers in various positions were proposed to investigate the efficiency droop behavior for blue light-emitting diodes (LEDs).The simulated electric field diagrams showed that the quantum well (QW) sandwiched by the p-n quantum barriers had a less electric field than the other QWs due to the original polarization-related electric field was partially balanced off by the built-in electric field of the p-n quantum barriers. In addition, the simulation results demonstrated that by selecting suitable position of p-n quantum barriers, the distribution of carriers could be effectively improved; hence the droop behavior could also be suppressed.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationScience and Innovations, CLEO_SI 2013
StatePublished - 18 Nov 2013
EventCLEO: Science and Innovations, CLEO_SI 2013 - San Jose, CA, United States
Duration: 9 Jun 201314 Jun 2013

Publication series

NameCLEO: Science and Innovations, CLEO_SI 2013

Conference

ConferenceCLEO: Science and Innovations, CLEO_SI 2013
CountryUnited States
CitySan Jose, CA
Period9/06/1314/06/13

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