Effect of In/Al ratios on structural and optical properties of InAlN films grown on Si(100) by RF-MOMBE

Wei Chun Chen*, Yue Han Wu, Chun Yen Peng, Chien Nan Hsiao, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

InxAl1-xN films were deposited on Si(100) substrate using metal-organic molecular beam epitaxy. We investigated the effect of the trimethylindium/trimethylaluminum (TMIn/TMAl) flow ratios on the structural, morphological, and optical properties of InxAl1-xN films. Surface morphologies and microstructure of the InxAl1-xN films were measured by atomic force microscopy, scanning electron microscopy, X-ray diffraction (XRD), and transmission electron microscopy (TEM), respectively. Optical properties of all films were evaluated using an ultraviolet/visible/infrared (UV/Vis/IR) reflection spectrophotometer. XRD and TEM results indicated that InxAl1-xN films were preferentially oriented in the c-axis direction. Besides, the growth rates of InxAl1-xN films were measured at around 0.6 μm/h in average. Reflection spectrum shows that the optical absorption of the InxAl1-xN films redshifts with an increase in the In composition.

Original languageEnglish
Article number204
Pages (from-to)1-7
Number of pages7
JournalNanoscale Research Letters
Volume9
Issue number1
DOIs
StatePublished - 1 Jan 2014

Keywords

  • In/Al ratios
  • InAlN
  • RF-MOMBE

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