Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity

Elyse Rosenbaum, Reza Rofan, Chen-Ming Hu

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

N- and pMOSFET's with 9-nm gate oxide are compared. Injected hot holes are found to be about 100 times as effective as electrons in precipitating oxide breakdown. PMOSFET's can tolerate 1000 times more charge injection than nMOSFET's, but not more drain current stress.

Original languageEnglish
Pages (from-to)599-601
Number of pages3
JournalIEEE Electron Device Letters
Volume12
Issue number11
DOIs
StatePublished - 1 Jan 1991

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