Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity

Elyse Rosenbaum; Reza Rofan; Chen-Ming Hu

doi:10.1109/55.119210

Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity

Elyse Rosenbaum, Reza Rofan, Chen-Ming Hu

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

N- and pMOSFET's with 9-nm gate oxide are compared. Injected hot holes are found to be about 100 times as effective as electrons in precipitating oxide breakdown. PMOSFET's can tolerate 1000 times more charge injection than nMOSFET's, but not more drain current stress.

Original language	English
Pages (from-to)	599-601
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	12
Issue number	11
DOIs	https://doi.org/10.1109/55.119210
State	Published - 1 Jan 1991

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@article{90087f2649714fab9c1fdcf117e79c4e,

title = "Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity",

abstract = "N- and pMOSFET's with 9-nm gate oxide are compared. Injected hot holes are found to be about 100 times as effective as electrons in precipitating oxide breakdown. PMOSFET's can tolerate 1000 times more charge injection than nMOSFET's, but not more drain current stress.",

author = "Elyse Rosenbaum and Reza Rofan and Chen-Ming Hu",

year = "1991",

month = jan,

day = "1",

doi = "10.1109/55.119210",

language = "English",

volume = "12",

pages = "599--601",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity

AU - Rosenbaum, Elyse

AU - Rofan, Reza

AU - Hu, Chen-Ming

PY - 1991/1/1

Y1 - 1991/1/1

N2 - N- and pMOSFET's with 9-nm gate oxide are compared. Injected hot holes are found to be about 100 times as effective as electrons in precipitating oxide breakdown. PMOSFET's can tolerate 1000 times more charge injection than nMOSFET's, but not more drain current stress.

AB - N- and pMOSFET's with 9-nm gate oxide are compared. Injected hot holes are found to be about 100 times as effective as electrons in precipitating oxide breakdown. PMOSFET's can tolerate 1000 times more charge injection than nMOSFET's, but not more drain current stress.

UR - http://www.scopus.com/inward/record.url?scp=0026257527&partnerID=8YFLogxK

U2 - 10.1109/55.119210

DO - 10.1109/55.119210

M3 - Article

AN - SCOPUS:0026257527

VL - 12

SP - 599

EP - 601

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 11

ER -

Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity

Abstract

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