Abstract
N- and pMOSFET's with 9-nm gate oxide are compared. Injected hot holes are found to be about 100 times as effective as electrons in precipitating oxide breakdown. PMOSFET's can tolerate 1000 times more charge injection than nMOSFET's, but not more drain current stress.
Original language | English |
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Pages (from-to) | 599-601 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 12 |
Issue number | 11 |
DOIs | |
State | Published - 1 Jan 1991 |