Abstract
N- and pMOSFET's with 9-nm gate oxide are compared. Injected hot holes are found to be about 100 times as effective as electrons in precipitating oxide breakdown. PMOSFET's can tolerate 1000 times more charge injection than nMOSFET's, but not more drain current stress.
| Original language | English |
|---|---|
| Pages (from-to) | 599-601 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 12 |
| Issue number | 11 |
| DOIs | |
| State | Published - 1 Jan 1991 |
Fingerprint Dive into the research topics of 'Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity'. Together they form a unique fingerprint.
Cite this
Rosenbaum, E., Rofan, R., & Hu, C-M. (1991). Effect of Hot-Carrier Injection on N- and Pmosfet Gate Oxide Integrity. IEEE Electron Device Letters, 12(11), 599-601. https://doi.org/10.1109/55.119210