Effect of hole shift on threshold characteristics of gasb-based double-hole photonic-crystal surface-emitting lasers

Yu Hsun Huang, Zi Xian Yang, Su Ling Cheng, Chien Hung Lin, Gray Lin*, Kien-Wen Sun, Chien Ping Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Photonic-crystal (PC) surface-emitting lasers (SELs) with double-hole structure in the square-lattice unit cell were fabricated on GaSb-based type-I InGaAsSb/AlGaAsSb heterostructures. The relative shift of two holes was varied within one half of the lattice period. We measured the lasing wavelengths and threshold pumping densities of 16 PC-SELs and investigated their dependence on the double-hole shift. The experimental results were compared to the simulated wavelengths and threshold gains of four band-edge modes. The measured lasing wavelength did not exhibit switching of band-edge mode; however, the calculated lowest threshold mode switched as the double-hole shift exceeded one quarter of the lattice period. The identification of band-edge lasing mode revealed that modal gain discrimination was dominated over by its mode wavelength separation.

Original languageEnglish
Article number468
JournalMicromachines
Volume12
Issue number5
DOIs
StatePublished - May 2021

Keywords

  • GaSb-based lasers
  • Infrared lasers
  • Photonic crystals
  • Surface-emitting lasers

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