Effect of high voltage stress on the DC performance of the Al2O3/AlN GaN metal-insulator-semiconductor high-electron mobility transistor for power applications

Ting En Hsieh, Yueh Chin Lin, Jen Ting Liao, Wei Cheng Lan, Ping Chieh Chin, Edward Yi Chang

Research output: Contribution to journalArticle

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Abstract

We demonstrate an Al2O3/AlN/AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistor (MIS-HEMT) device with stable electrical properties under high-voltage stress, by using an Al2O3/AlN stack layer as the gate dielectric layer. Excellent quality AlN/Al2O3 GaN interface was obtained by using plasma-enhanced ALD (PE-ALD), resulting in a very low interface trap density (Dit) of ∼1.8 × 1011 eV-1cm-2, obtained by using the conductance method. The device exhibits a small threshold voltage hysteresis of >200mVand a lower gate-source leakage current. No obvious changes in the drain-source current and ON-resistance were observed for the device that was subject to the drain-source voltage stress of 100V for 15 h.

Original languageEnglish
Article number104102
JournalApplied Physics Express
Volume8
Issue number10
DOIs
StatePublished - 1 Oct 2015

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