Effect of growth temperature on the electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well diodes

Jenn-Fang Chen*, P. Y. Wang, J. S. Wang, H. Z. Wong

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

The electric properties of In0.12Ga0.88As/GaAs p-i-n multiple-quantum-well (MQW) diodes, with the MQW layer grown at different temperatures by molecular beam epitaxy, have been investigated. Temperature-dependent current-voltage studies reveal a trap-filled limit current at a low temperature and a generation-recombination current via deep levels at high temperature for a 300°C-grown sample. Frequency-dependent capacitance and deep-level transient spectroscopy reveal one majority trap at 0.73 eV and two minority traps at 0.71 and 0.43 eV. The 0.73 eV trap is also detected in 550°C-grown samples, suggesting that it is a common defect in relaxed InGaAs/ GaAs MQWs and probably originates from the defect states related to the strain relaxation. The 0.71 eV trap is believed to be the dominating deep level that governs the current conduction due to the activation energy observed in the current-voltage characteristics.

Original languageEnglish
Pages (from-to)8074-8079
Number of pages6
JournalJournal of Applied Physics
Volume87
Issue number11
DOIs
StatePublished - 1 Jun 2000

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