Effect of graded-temperature arsenic prelayer on quality of GaAs on Ge/Si substrates by metalorganic vapor phase epitaxy

H. W. Yu, E. Y. Chang*, Y. Yamamoto, B. Tillack, W. C. Wang, C. I. Kuo, Y. Y. Wong, H. Q. Nguyen

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The growth of GaAs epitaxy on Ge/Si substrates with an arsenic prelayer grown with graded temperature ramped from 300 to 420 C is investigated. It is demonstrated that the graded-temperature arsenic prelayer grown on a Ge/Si substrate annealed at 650 C not only improves the surface morphology (roughness: 1.1 nm) but also reduces the anti-phase domains' (APDs) density in GaAs epitaxy (dislocation density: ∼2 107cm-2). Moreover, the unwanted interdiffusion between Ge and GaAs epitaxy is suppressed by using the graded-temperature arsenic prelayer due to the low energy of the Ge-As bond and the use of a low V/III ratio of 20.

Original languageEnglish
Article number171908
JournalApplied Physics Letters
Volume99
Issue number17
DOIs
StatePublished - 24 Oct 2011

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