Effect of graded AlxGa1-xN interlayer buffer on the strain of GaN grown on Si (111) using MOCVD method

Kung Liang Lin*, Edward Yi Chang, Tingkai Li, Wei Ching Huang, Yu Lin Hsiao, Douglas Tweet, Jer Shen Maa, Sheng Teng Hsu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

GaN film grown on Si substrate with AlN/AlxGa1-xN buffer is studied by low pressure metal organic chemical vapor deposition (MOCVD) method. The AlxGa1-xN film with Al composition varying from 0- 0.66 was used. The correlation of the Al composition in the AlxGa1-xN film with the stress of the GaN film grown was studied using high resolution X-ray diffraction including symmetrical and asymmetrical ω/2θscans and reciprocal space maps. It is found that with proper design of the Al composition in the AlxGa1-xN buffer layer, crack-free GaN films can be successfully grown on Si (111) substrates using AlN and AlxGa1-xN buffer layers.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium Proceedings - Advances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates
Pages117-122
Number of pages6
StatePublished - 18 Dec 2008
EventAdvances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates - San Francisco, CA, United States
Duration: 24 Mar 200828 Mar 2008

Publication series

NameMaterials Research Society Symposium Proceedings
Volume1068
ISSN (Print)0272-9172

Conference

ConferenceAdvances in GaN, GaAs, SiC and Related Alloys on Silicon Substrates
CountryUnited States
CitySan Francisco, CA
Period24/03/0828/03/08

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