Effect of graded Al xGa 1-xN layers on the properties of GaN grown on patterned Si substrates

Yu Lin Hsiao, Lung Chi Lu, Chia Hsun Wu, Edward Yi Chang*, Chien I. Kuo, Jer Shen Maa, Kung Liang Lin, Tien Tung Luong, Wei Ching Huang, Chia Hua Chang, Chang Fu Dee, Burhanuddin Yeop Majlis

*Corresponding author for this work

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Abstract

2.2-μm-thick crack-free GaN films were grown on patterned Si substrates. The crack-free GaN films were obtained by patterning Si substrate and optimizing the graded Al xGa 1-xN layers. With the increase of the graded Al xGa 1-xN layer thickness, the GaN crystal quality improved as judged from the X-ray diffraction data. By applying multi-Al xGa 1-xN layers on the patterned Si substrate, a 31% reduction of tensile stress for the GaN film was obtained as measured by micro-Raman. For the AlGaN/GaN high electron mobility transistor grown on 1 × 1 cm 2 larger patterns, the device exhibits maximum drain current density of 776mA/mm and maximum transconductance of 101mS/mm.

Original languageEnglish
Article number025505
JournalJapanese journal of applied physics
Volume51
Issue number2 PART 1
DOIs
StatePublished - 1 Feb 2012

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    Hsiao, Y. L., Lu, L. C., Wu, C. H., Chang, E. Y., Kuo, C. I., Maa, J. S., Lin, K. L., Luong, T. T., Huang, W. C., Chang, C. H., Dee, C. F., & Majlis, B. Y. (2012). Effect of graded Al xGa 1-xN layers on the properties of GaN grown on patterned Si substrates. Japanese journal of applied physics, 51(2 PART 1), [025505]. https://doi.org/10.1143/JJAP.51.025505