The effect of a simple gas switching sequence on interface abruptness CBE growth was studied using double crystal X-ray diffraction (DCXRD), photoluminescence (PL), and scanning tunneling microscopy (STM). Optimization of the switching sequence produces monolayer abruptness for both the InP/InGaAs and the InGaAs/InP interfaces due to the X-ray rocking curve measurements, low-temperature PL measurements, and STM results.
|Number of pages||4|
|Journal||Conference Proceedings - International Conference on Indium Phosphide and Related Materials|
|State||Published - 1 Jan 1997|
|Event||Proceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA|
Duration: 11 May 1997 → 15 May 1997