Effect of gas switching on InP/InGaAs interfaces during CBE growth

S. Thomas*, Hao-Chung Kuo, A. P. Curtis, W. Wu, J. R. Tucker, G. E. Stillman

*Corresponding author for this work

Research output: Contribution to journalConference article

1 Scopus citations

Abstract

The effect of a simple gas switching sequence on interface abruptness CBE growth was studied using double crystal X-ray diffraction (DCXRD), photoluminescence (PL), and scanning tunneling microscopy (STM). Optimization of the switching sequence produces monolayer abruptness for both the InP/InGaAs and the InGaAs/InP interfaces due to the X-ray rocking curve measurements, low-temperature PL measurements, and STM results.

Original languageEnglish
Pages (from-to)312-315
Number of pages4
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
DOIs
StatePublished - 1 Jan 1997
EventProceedings of the 1997 International Conference on Indium Phosphide and Related Materials - Cape Cod, MA, USA
Duration: 11 May 199715 May 1997

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