Effect of fluorine incorporation on 1/f Noise of HfSiON FETs for future mixed-signal CMOS

Yuri Yasuda*, Chen-Ming Hu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

8 Scopus citations

Abstract

An effect of fluorine incorporation into HfSiON on 1/f noise is shown for the first time. Fluorine effect on 1/f noise for SiON and HfSiON devices differ in that F does not improve the HfSiON N-FET 1/f noise. Apparently, the interface traps created by Hf close to the conduction band cannot be passivated by fluorine. For future analog/mixed -signal applications, HfSiON P-FET is expected to limit noise performance even though F can improve its noise.

Original languageEnglish
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
StatePublished - 1 Dec 2006
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: 10 Dec 200613 Dec 2006

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Conference

Conference2006 International Electron Devices Meeting, IEDM
CountryUnited States
CitySan Francisco, CA
Period10/12/0613/12/06

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