Effect of fin angle on electrical characteristics of nanoscale round-top-gate bulk FinFETs

Yiming Li*, Chih Hong Hwang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Scopus citations

Abstract

In this brief, electrical characteristics of 25-nm round-top-gate fin-typed field-effect transistors (FinFETs) on silicon wafers are numerically explored. With an ideal fin angle (i.e., θ = 90°, the FinFETs with doped and undoped (for this case, the device has a metal gate) channels that was fabricated on silicon and silicon-on-insulator wafers are simulated and compared. With a 3-D quantum-correction-transport simulation, characteristic comparison shows that bulk FinFETs with the undoped channel possess promising electrical characteristics. By considering different short-channel effects, dependence of the device performance on the nonideal fin angle and fin height is further investigated. Optimal structure configuration for the round-top-gate bulk FinFETs is thus drawn to show the strategy of fabrication in sub-25-nm MOSFET devices.

Original languageEnglish
Pages (from-to)3426-3429
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume54
Issue number12
DOIs
StatePublished - Dec 2007

Keywords

  • Bulk fin-typed field-effect transistors (FinFETs)
  • Fin angle
  • Manufacturability
  • Manufacture
  • Metal gate
  • Modeling
  • Modeling and simulation
  • MOSFET
  • Round-top gate
  • Simulation

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