Effect of fin angle on electrical characteristics of nanoscale bulk FinFETs

Yiming Li*, Wei Hsin Chen

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

Bulk fin-shaped field effect transistor (finFET) has been viewed as a promising candidate for sub-45 nm very large-scale integrated (VLSI) circuit design and manufacturing. The structure features excellent device characteristics in comparing with the conventionally planar devices. In fabricating the bulk finFETs, the effect of a nonrectangular fin angle has to be carefully concerned that an ideal fin angle (90 degree) is not easy to be manufactured. Therefore, the short channel effect may be arisen due to the non-ideal manufacturing conditions and influence the device electrical properties. In this paper, the performance impacted by angles and heights of bulk finFETs are for the first time comprehensively investigated to draw the optimal strategy in novel VLSI circuit design.

Original languageEnglish
Pages20-23
Number of pages4
StatePublished - 2006
Event2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings - Boston, MA, United States
Duration: 7 May 200611 May 2006

Conference

Conference2006 NSTI Nanotechnology Conference and Trade Show - NSTI Nanotech 2006 Technical Proceedings
CountryUnited States
CityBoston, MA
Period7/05/0611/05/06

Keywords

  • 3D simulation
  • Bulk finFET
  • Electrical characteristics
  • Geometry effect
  • Nanoscale VLSI devices
  • Optimal angle

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