Effect of etching depth on threshold characteristics of GaSb-based middle infrared photonic-crystal surface-emitting lasers

Zong Lin Li, Shen Chieh Lin, Kuo-Jui Lin*, Hui Wen Cheng, Kien-Wen Sun, Chien-Ping Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We study the effect of etching depth on the threshold characteristics of GaSb-based middle infrared (Mid-IR) photonic-crystal surface-emitting lasers (PCSELs) with different lattice periods. The below-threshold emission spectra aremeasured to identify the bandgap as well as band-edgemodes. Moreover, the bandgap separation widens with increasing etching depth as a result of enhanced diffraction feedback coupling. However, the coupling is nearly independent of lattice period. The relationship between threshold gain and Bragg detuning is also experimentally determined for PCSELs and is similar to that calculated theoretically for one-dimensional distributed feedback lasers.

Original languageEnglish
Article number188
Number of pages7
JournalMicromachines
Volume10
Issue number3
DOIs
StatePublished - 14 Mar 2019

Keywords

  • GaSb-based lasers
  • Middle infrared lasers
  • Photonic crystals
  • Surface-emitting lasers

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