Effect of emitter-base spacing on the current gain of AlGaAs/GaAs heterojunction bipolar transistors

Won Seong Lee*, Daisuke Ueda, Tony Ma, Yi Ching Pao, James S. Harris

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

An investigation of the effect of surface recombination and emitter-base-contact spacing on the DC current-gain AlGaAs/GaAs heterojunction bipolar transistor (HBT) using thin AlGaAs emitter structures is discussed. The selectivity-etched, thin-AlGaAs-emitter layer has been used to prevent an exposed extrinsic base region, which has previously limited current gain because of high surface recombination. It is found that a factor of approximately 50 improvement in the current gain can be achieved by proper surface passivation and emitter-base-contact spacing.

Original languageEnglish
Pages (from-to)200-202
Number of pages3
JournalElectron device letters
Volume10
Issue number5
DOIs
StatePublished - 1 May 1989

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