Effect of electrostatic discharge on power output and reliability of 850 nm vertical-cavity surface-emitting lasers

Chun Yuan Huang*, Meng Chyi Wu, Hsin-Chieh Yu, Wen Jang Jiang, Jin Mei Wang, Chia Pin Sung

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The influence of electrostatic discharge (ESD) stress voltage on the device performance of 850 nm vertical-cavity surface-emitting lasers (VCSEL) was investigated. It was observed that the ESD effect induces dark-region defects, which acts as nonradiative recombination centers in the active layer and increase the leakage current and degrade the light output power. It was shown that the VCSEL exhibits multiple transverse mode without ESD stress voltage. It was demonstrated that the device exhibits a weak but single fundamental mode with smaller beam divergence by increasing the stress voltage up t0 2.6 kV.

Original languageEnglish
Pages (from-to)1970-1973
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number4
DOIs
StatePublished - 1 Jul 2004

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