Effect of dopant on reaction between polycrystalline silicon and thin-film rhodium

P. A. Psaras*, R. D. Thompson, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

High phosphorus doping (6.0 × 1020 atom/cm 3) of polycrystalline silicon has been found to change the first rhodium silicide formation from the monosilicide (RhSi) to a metal-rich silicide (Rh2Si) which has twice the conductivity of the former. The methods of specimen analysis and characterization utilized in this study are Rutherford backscattering spectrometry, Seemann Bohlin x-ray diffraction, sheet resistance, and resistivity measurement via four-point probe.

Original languageEnglish
Pages (from-to)250-252
Number of pages3
JournalApplied Physics Letters
Volume47
Issue number3
DOIs
StatePublished - 1 Dec 1985

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