Effect of different patterns epitaxial lift-off process by finite element method

Ray-Hua Horng, F. L. Wu, S. L. Ou, F. C. Liu, M. T. Lin, C. H. Lu, Y. C. Kao, D. S. Wuu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, using the finite element method analyzes stress and strain of device structure on different patterns epitaxial lift-off process. Design copper substrate bears stress 28.3 MPa and to simulate the change of the sacrificial layer in the epitaxial lift-off process, which setting the sacrificial layer etching amount for 10%, 30%, 50%, 70%, 90%. Besides, the stress and strain distribution of device structure analyzes on various sacrificial layer etching amount. Copper substrate is subject to tensile stress and its corner exist the maximum of stress and strain. Moreover, the stress distribution of epilayer concentrates in the upper and lower interface of sacrificial layer. The stress is larger sacrificial layer etching to 10% than etching to 90%. The structures 3 stress is relatively lower, which the stress reduces approximately half on etching amount 50%. Therefore, the GaAs epilayer not only reduce subjected to stress but also decrease the occurrence of defects.

Original languageEnglish
Title of host publicationGraphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5
Pages295-301
Number of pages7
Edition1
DOIs
StatePublished - 21 Oct 2013
Event5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting - Toronto, ON, Canada
Duration: 12 May 201317 May 2013

Publication series

NameECS Transactions
Number1
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference5th International Symposium on Graphene, Ge/III-V and Emerging Materials For Post-CMOS Applications - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period12/05/1317/05/13

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  • Cite this

    Horng, R-H., Wu, F. L., Ou, S. L., Liu, F. C., Lin, M. T., Lu, C. H., Kao, Y. C., & Wuu, D. S. (2013). Effect of different patterns epitaxial lift-off process by finite element method. In Graphene, Ge/III-V, and Emerging Materials for Post CMOS Applications 5 (1 ed., pp. 295-301). (ECS Transactions; Vol. 53, No. 1). https://doi.org/10.1149/05301.0295ecst