Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off

Jung Tang Chu, Wen Deng Liang, Chih Chiang Kao, Hung Wen Huang, Chen Fu Chu, Hao-Chung Kuo*, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Large-area (1000×1000 μm2) p-side down InGaN light-emitting diodes (LEDs) have been fabricated by laser lift-off (LLO) technique. The p-side down LEDs with different geometric patterns of n-electrode were fabricated to investigate electrode pattern-dependent optical characteristics. Current crowding effect was first observed in in the p-side down InGaN LLO-LEDs. The LEDs with well designed n-electrode shows a uniform distribution of light-emitting pattern and higher out put power due to uniform current spreading and minimization of thermal effect. The output power saturation induced by current crowding in the LEDs with simplest geometric n-electrode was demonstrated. In absent of transparent contact layer for current spreading, the n-electrode pattern has remarkable influence on the current distribution and consequently the light output power of the large-area p-side down LEDs.

Original languageEnglish
Article number20
Pages (from-to)122-128
Number of pages7
JournalProgress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume5739
DOIs
StatePublished - 21 Jul 2005
EventLight-Emitting Diodes: Research, Manufacturing, and Applications IX - San Jose, CA, United States
Duration: 25 Jan 200527 Jan 2005

Keywords

  • GaN LEDs
  • Large-area light-emitting LEDs
  • Laser lift-off (LLO)
  • Wafer bonding

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