Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off

Jung Tang Chu; Wen Deng Liang; Chih Chiang Kao; Hung Wen Huang; Chen Fu Chu; Hao-Chung Kuo; S. C. Wang

doi:10.1117/12.583288

Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off

Jung Tang Chu, Wen Deng Liang, Chih Chiang Kao, Hung Wen Huang, Chen Fu Chu, Hao-Chung Kuo^*, S. C. Wang

^*Corresponding author for this work

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

Abstract

Large-area (1000×1000 μm²) p-side down InGaN light-emitting diodes (LEDs) have been fabricated by laser lift-off (LLO) technique. The p-side down LEDs with different geometric patterns of n-electrode were fabricated to investigate electrode pattern-dependent optical characteristics. Current crowding effect was first observed in in the p-side down InGaN LLO-LEDs. The LEDs with well designed n-electrode shows a uniform distribution of light-emitting pattern and higher out put power due to uniform current spreading and minimization of thermal effect. The output power saturation induced by current crowding in the LEDs with simplest geometric n-electrode was demonstrated. In absent of transparent contact layer for current spreading, the n-electrode pattern has remarkable influence on the current distribution and consequently the light output power of the large-area p-side down LEDs.

Original language	English
Article number	20
Pages (from-to)	122-128
Number of pages	7
Journal	Progress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume	5739
DOIs	https://doi.org/10.1117/12.583288
State	Published - 21 Jul 2005
Event	Light-Emitting Diodes: Research, Manufacturing, and Applications IX - San Jose, CA, United States Duration: 25 Jan 2005 → 27 Jan 2005

Keywords

GaN LEDs
Large-area light-emitting LEDs
Laser lift-off (LLO)
Wafer bonding

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Chu, Jung Tang ; Liang, Wen Deng ; Kao, Chih Chiang ; Huang, Hung Wen ; Chu, Chen Fu ; Kuo, Hao-Chung ; Wang, S. C. / Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off. In: Progress in Biomedical Optics and Imaging - Proceedings of SPIE. 2005 ; Vol. 5739. pp. 122-128.

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title = "Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off",

abstract = "Large-area (1000×1000 μm2) p-side down InGaN light-emitting diodes (LEDs) have been fabricated by laser lift-off (LLO) technique. The p-side down LEDs with different geometric patterns of n-electrode were fabricated to investigate electrode pattern-dependent optical characteristics. Current crowding effect was first observed in in the p-side down InGaN LLO-LEDs. The LEDs with well designed n-electrode shows a uniform distribution of light-emitting pattern and higher out put power due to uniform current spreading and minimization of thermal effect. The output power saturation induced by current crowding in the LEDs with simplest geometric n-electrode was demonstrated. In absent of transparent contact layer for current spreading, the n-electrode pattern has remarkable influence on the current distribution and consequently the light output power of the large-area p-side down LEDs.",

keywords = "GaN LEDs, Large-area light-emitting LEDs, Laser lift-off (LLO), Wafer bonding",

author = "Chu, {Jung Tang} and Liang, {Wen Deng} and Kao, {Chih Chiang} and Huang, {Hung Wen} and Chu, {Chen Fu} and Hao-Chung Kuo and Wang, {S. C.}",

year = "2005",

month = jul,

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doi = "10.1117/12.583288",

language = "English",

volume = "5739",

pages = "122--128",

journal = "Progress in Biomedical Optics and Imaging - Proceedings of SPIE",

issn = "1605-7422",

publisher = "SPIE",

note = "null ; Conference date: 25-01-2005 Through 27-01-2005",

}

Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off. / Chu, Jung Tang; Liang, Wen Deng; Kao, Chih Chiang; Huang, Hung Wen; Chu, Chen Fu; Kuo, Hao-Chung; Wang, S. C.

In: Progress in Biomedical Optics and Imaging - Proceedings of SPIE, Vol. 5739, 20, 21.07.2005, p. 122-128.

Research output: Contribution to journal › Conference article › peer-review

TY - JOUR

T1 - Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off

AU - Chu, Jung Tang

AU - Liang, Wen Deng

AU - Kao, Chih Chiang

AU - Huang, Hung Wen

AU - Chu, Chen Fu

AU - Kuo, Hao-Chung

AU - Wang, S. C.

PY - 2005/7/21

Y1 - 2005/7/21

N2 - Large-area (1000×1000 μm2) p-side down InGaN light-emitting diodes (LEDs) have been fabricated by laser lift-off (LLO) technique. The p-side down LEDs with different geometric patterns of n-electrode were fabricated to investigate electrode pattern-dependent optical characteristics. Current crowding effect was first observed in in the p-side down InGaN LLO-LEDs. The LEDs with well designed n-electrode shows a uniform distribution of light-emitting pattern and higher out put power due to uniform current spreading and minimization of thermal effect. The output power saturation induced by current crowding in the LEDs with simplest geometric n-electrode was demonstrated. In absent of transparent contact layer for current spreading, the n-electrode pattern has remarkable influence on the current distribution and consequently the light output power of the large-area p-side down LEDs.

AB - Large-area (1000×1000 μm2) p-side down InGaN light-emitting diodes (LEDs) have been fabricated by laser lift-off (LLO) technique. The p-side down LEDs with different geometric patterns of n-electrode were fabricated to investigate electrode pattern-dependent optical characteristics. Current crowding effect was first observed in in the p-side down InGaN LLO-LEDs. The LEDs with well designed n-electrode shows a uniform distribution of light-emitting pattern and higher out put power due to uniform current spreading and minimization of thermal effect. The output power saturation induced by current crowding in the LEDs with simplest geometric n-electrode was demonstrated. In absent of transparent contact layer for current spreading, the n-electrode pattern has remarkable influence on the current distribution and consequently the light output power of the large-area p-side down LEDs.

KW - GaN LEDs

KW - Large-area light-emitting LEDs

KW - Laser lift-off (LLO)

KW - Wafer bonding

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DO - 10.1117/12.583288

M3 - Conference article

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SP - 122

EP - 128

JO - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

JF - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

SN - 1605-7422

M1 - 20

Y2 - 25 January 2005 through 27 January 2005

ER -

Effect of different n-electrode patterns on optical characteristics of large-area p-side down InGaN light-emitting diodes fabricated by laser lift-off

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Keywords

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