Very good quality of polycrystalline diamond films with different major facets were grown on the Si(100) substrates at different position of the plasma ball in a microwave plasma enhanced chemical vapor deposition chamber. Pt/BF+ 2 ion implanted polycrystalline diamond contacts were fabricated to examine the effect of diamond facets on their electrical properties. The Pt/diamond contact exhibited Schottky characteristics for the diamond film with major facet (100). In contrast, the Pt/diamond contact exhibited ohmic behavior for the diamond film with major facet (111). The I-V characteristics of the Pt/BF+ 2 ion implanted polycrystalline diamond contacts were not reliable if the diamond facet factor was not considered.