Effect of diamond facet on the electrical properties of Pt/BF + 2 ion implanted polycrystalline diamond contacts

Yu-Ting Cheng*, S. J. Lin, J. Hwang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

Very good quality of polycrystalline diamond films with different major facets were grown on the Si(100) substrates at different position of the plasma ball in a microwave plasma enhanced chemical vapor deposition chamber. Pt/BF+ 2 ion implanted polycrystalline diamond contacts were fabricated to examine the effect of diamond facets on their electrical properties. The Pt/diamond contact exhibited Schottky characteristics for the diamond film with major facet (100). In contrast, the Pt/diamond contact exhibited ohmic behavior for the diamond film with major facet (111). The I-V characteristics of the Pt/BF+ 2 ion implanted polycrystalline diamond contacts were not reliable if the diamond facet factor was not considered.

Original languageEnglish
Pages (from-to)3344-3346
Number of pages3
JournalApplied Physics Letters
Volume63
Issue number24
DOIs
StatePublished - 1 Dec 1993

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