Effect of deposition temperature on chemical structure of lanthanum oxide/Si interface structure

H. Nohira*, T. Matsuda, K. Tachi, Y. Shiino, J. Song, Y. Kuroki, Jin Aun Ng, P. Ahmet, K. Kakushima, K. Tsutsui, E. Ikenaga, K. Kobayashi, H. Iwai, T. Hattori

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

5 Scopus citations

Abstract

The effect of substrate-temperature during the deposition of lanthanum oxide on the chemical structure of lanthanum oxide/Si(100) interfacial transition layer formed between lanthanum oxide and Si-substrate was studied from the measurements of angle-resolved Si 1s, O 1s and La 3d5/2 photoelectron spectra. In the case of the deposition at room temperature the amount of lanthanum silicate (La-silicate) was extremely small, and was not affected by the post deposition annealing (PDA) at 300°C, and increased by PDA at temperature above 500°C. On the other hand, in the case of the deposition at 300°C the amount of La-silicate increased appreciably by PDA even at 300°C. Therefore, the existence of La-silicate accelerates the formation of La-silicate by PDA. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)169-173
Number of pages5
JournalECS Transactions
Volume3
Issue number2
DOIs
StatePublished - 2006
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 29 Oct 20063 Nov 2006

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