The effect of substrate-temperature during the deposition of lanthanum oxide on the chemical structure of lanthanum oxide/Si(100) interfacial transition layer formed between lanthanum oxide and Si-substrate was studied from the measurements of angle-resolved Si 1s, O 1s and La 3d5/2 photoelectron spectra. In the case of the deposition at room temperature the amount of lanthanum silicate (La-silicate) was extremely small, and was not affected by the post deposition annealing (PDA) at 300°C, and increased by PDA at temperature above 500°C. On the other hand, in the case of the deposition at 300°C the amount of La-silicate increased appreciably by PDA even at 300°C. Therefore, the existence of La-silicate accelerates the formation of La-silicate by PDA. copyright The Electrochemical Society.
|Number of pages||5|
|State||Published - 2006|
|Event||Advanced Gate Stack, Source/Drain, and Channel Engineering fo Si-Based CMOS 2: New Materials, Processes, and Equipment - 210th Electrochemical Society Meeting - Cancun, Mexico|
Duration: 29 Oct 2006 → 3 Nov 2006