Effect of deposition temperature and oxygen flow rate on properties of low dielectric constant SiCOH film prepared by plasma enhanced chemical vapor deposition using diethoxymethylsilane

Y. L. Cheng, Y. L. Wang*, G. J. Hwang, M. L. O'Neill, E. J. Karwacki, Po-Tsun Liu, C. F. Chen

*Corresponding author for this work

Research output: Contribution to journalArticle

15 Scopus citations

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Engineering & Materials Science

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