Effect of deposition sequence and plasma treatment on ALCVD™ HfO 2 N-MOSFET properties

Chan Lim*, Yudong Kim, Tuo-Hung Hou, Jim Gutt, Steven Marcus, Christophe Pomarede, Eric Shero, Henk De Waard, Chris Werkhoven, Chen Lee, Jihane Tamim, Nirmal Chaudhary, Gennadi Bersuker, Joel Barnett, Chadwin Young, Peter Zeitzoff, George A. Brown, Mark Gardner, Robert W. Murto, Howard R. Huff

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

A modified deposition sequence for ALCVD™ (Atomic Layer CVD™) [1] HfO2 was devised for the purpose of enhancing the layer quality. N-MOSFET performance with ALCVD™ HfO2 deposited using the modified deposition sequence, in conjunction with a subsequent plasma treatment, was demonstrated to reduce gate leakage current by over 3 orders of magnitude. Peak mobility and high field (1MV/cm) mobility were improved by 50% and 40%, respectively, when compared to conventional ALCVD™ HfO2.

Original languageEnglish
Pages83-91
Number of pages9
StatePublished - 1 Dec 2003
EventPhysics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues - Salt Lake City, UT, United States
Duration: 20 Oct 200224 Oct 2002

Conference

ConferencePhysics and Technology of High-k Gate Dielectric I - Proceedings of the International Symposium on High Dielectric Constant Materials: Materials Science, Processing Reliability, and Manufacturing Issues
CountryUnited States
CitySalt Lake City, UT
Period20/10/0224/10/02

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